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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10249494 B1

PDFFull Text
Date of Patent:
Apr. 02, 2019

Filed:

Jul. 27, 2017

Free-standing substrate, function element and method for producing same

Applicant:

Ngk Insulators, Ltd., Nagoya, Aichi, JP;

Inventors:

Takashi Yoshino, Ama, JP;

Katsuhiro Imai, Nagoya, JP;

Masahiro Sakai, Nagoya, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, Aichi, JP;

Attorney:

Flynn Thiel, P.C.

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C30B 7/10 (2006.01); C30B 9/12 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/20 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); H01L 21/78 (2006.01); H01L 29/34 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01); C30B 9/10 (2006.01); C30B 19/02 (2006.01); C30B 19/12 (2006.01); C30B 28/04 (2006.01); C30B 28/14 (2006.01); H01L 29/20 (2006.01); H01L 29/872 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); C30B 7/105 (2013.01); C30B 9/10 (2013.01); C30B 9/12 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 28/04 (2013.01); C30B 28/14 (2013.01); C30B 29/20 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/02002 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/02579 (2013.01); H01L 21/02595 (2013.01); H01L 21/02609 (2013.01); H01L 21/7806 (2013.01); H01L 29/34 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/025 (2013.01); H01L 33/32 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01); H01L 29/66212 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01);
Abstract

A self-supporting substrate includes a first nitride layer grown by a hydride vapor deposition method or ammonothermal method and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium; and a second nitride layer grown by a sodium flux method on the first nitride layer and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium. The first nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the first nitride layer. The second nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the second nitride layer. The first nitride layer has a thickness larger than a thickness of the second nitride layer.

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