Nagoya, Japan

Masahiro Sakai

This inventor holds 23 USPTO granted patents, primarily in Nitride Semiconductor Technology. Top assignee: Ngk Insulators, Inc.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiro Sakai. Retrieved from https://idiyas.com/inventor/masahiro-sakai-ffe5bslz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 82.6

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 179(Granted Patents)


Location History:

  • Aichi, JP (2022)
  • Nagoya, JP (2006 - 2024)

Company Filing History:


Years Active: 2006-2026

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Areas of Expertise:
Nitride Substrate
Epitaxial Growth
Gallium Nitride
Free-Standing Substrate
Functional Element
Seed Crystal
Composite Substrates
Lamb Wave Device
Thin Film Device
Epitaxial Wafers
High-Resistivity GaN
Semiconductor Structures
23 patents (USPTO):Explore Patents

Title: **Masahiro Sakai - Innovator in Semiconductor Technology from Nagoya**

Introduction

Masahiro Sakai, based in Nagoya, Japan, is an accomplished inventor with an impressive portfolio of 21 patents. His innovative contributions primarily focus on Group-III element nitride semiconductor substrates, which are crucial for various electronic devices and applications.

Latest Patents

Sakai's latest patents revolve around the advancements in Group-III element nitride semiconductor substrates. One noteworthy patent details a substrate containing a first surface and a second surface designed to minimize variations in device characteristics, even when the size of the devices produced on the first surface increases. The substrate presents several specifications: it maintains a maximum surface waviness profile of 150 nm or less, a root mean square height of 25 nm or less, and an average length of surface waviness profile elements of 0.5 mm or more.

In another recent patent, Sakai developed a visually distinguishable Group-III element nitride semiconductor substrate. This substrate configuration allows for easy detection by optical sensors, reduces warping throughout the substrate, and maximizes the effective area for device production. Importantly, the first surface is designed as a mirror surface, while the second surface includes regions with differing finishes, enhancing its utility in manufacturing.

Career Highlights

Masahiro Sakai is affiliated with NGK Insulators, Inc., a company renowned for its advancements in electrical insulation materials and semiconductor components. Through his work at NGK, Sakai has significantly contributed to the development of cutting-edge semiconductor technologies that are vital for the electronics industry.

Collaborations

Throughout his career, Sakai has collaborated with esteemed colleagues, including Takashi Yoshino and Takanao Shimodaira. Their partnerships have facilitated the sharing of knowledge and expertise, further driving innovation in the field of semiconductor substrates.

Conclusion

In summary, Masahiro Sakai stands out as a prominent inventor in the semiconductor industry, with a remarkable collection of patents that push the boundaries of technology. His work not only enhances device production efficiency but also contributes to the overall advancement of semiconductor materials. Sakai's ongoing commitment to innovation in this field continues to shape the landscape of electronic device manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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