The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Feb. 21, 2020
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Takayuki Hirao, Nisshin, JP;

Hirokazu Nakanishi, Nagoya, JP;

Mikiya Ichimura, Ichinomiya, JP;

Takanao Shimodaira, Nagoya, JP;

Masahiro Sakai, Nagoya, JP;

Takashi Yoshino, Ama, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); C30B 29/40 (2006.01); H01L 33/18 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); H01L 33/18 (2013.01); H01L 33/30 (2013.01);
Abstract

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.


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