The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Sep. 08, 2017
Applicant:
Ngk Insulators, Ltd., Nagoya, Aichi, JP;
Inventors:
Masahiro Sakai, Nagoya, JP;
Takashi Yoshino, Ama, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, Aichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 19/12 (2006.01); C30B 1/02 (2006.01); C30B 29/40 (2006.01); C30B 33/08 (2006.01); C30B 19/02 (2006.01); C30B 33/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 1/023 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 29/406 (2013.01); C30B 33/06 (2013.01); C30B 33/08 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02694 (2013.01);
Abstract
A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and has a portion into which dislocation defects are introduced or an amorphous portion.