The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Dec. 20, 2022
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Masahiro Sakai, Nagoya, JP;
Takashi Yoshino, Ama, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); H01L 21/02 (2006.01); H10H 20/825 (2025.01); C30B 19/02 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02005 (2013.01); C30B 29/406 (2013.01); H10H 20/825 (2025.01); C30B 19/02 (2013.01); C30B 25/18 (2013.01);
Abstract
A free-standing substrate, for growing epitaxial crystal composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof, includes a nitrogen polar surface and group 13 element polar surface. The nitrogen polar surface is warped in a convex shape, and a chamfer part is provided in an outer peripheral part of the nitrogen polar surface.
Sakai, Masahiro. (2026). Free-standing substrate for epitaxial crystal growth, and functional element (U.S. Patent No. 12564023). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12564023
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile