The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Mar. 23, 2020
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Masahiro Sakai, Nagoya, JP;
Shohei Oue, Nagoya, JP;
Masashi Goto, Nagoya, JP;
Takashi Yoshino, Ama, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 33/54 (2010.01); H01L 33/00 (2010.01); C30B 29/38 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); C30B 29/38 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02513 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/54 (2013.01);
Abstract
A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a groupnitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the groupnitride, metal of a groupelement and/or void is present between the raised part and supporting substrate.