The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Feb. 21, 2020
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Takayuki Hirao, Nisshin, JP;

Hirokazu Nakanishi, Nagoya, JP;

Mikiya Ichimura, Ichinomiya, JP;

Takanao Shimodaira, Nagoya, JP;

Masahiro Sakai, Nagoya, JP;

Takashi Yoshino, Ama, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); C01B 21/06 (2006.01); C09K 11/08 (2006.01); C09K 11/62 (2006.01); C09K 11/64 (2006.01); C30B 29/40 (2006.01); C30B 29/38 (2006.01); G09G 3/3208 (2016.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C01B 21/0602 (2013.01); C01B 21/0632 (2013.01); C09K 11/0883 (2013.01); C09K 11/62 (2013.01); C09K 11/64 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); G09G 3/3208 (2013.01); H01L 33/18 (2013.01);
Abstract

A layer of a crystal of a groupnitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of the crystal layer of the groupnitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the groupnitride.


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