The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Mar. 31, 2006
Yasuhisa Ushida, Aichi-ken, JP;
Daisuke Shinoda, Aichi-ken, JP;
Daisuke Yamazaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Yuhei Ikemoto, Aichi-ken, JP;
Naoki Shibata, Aichi-ken, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Yasuhisa Ushida, Aichi-ken, JP;
Daisuke Shinoda, Aichi-ken, JP;
Daisuke Yamazaki, Aichi-ken, JP;
Koji Hirata, Aichi-ken, JP;
Yuhei Ikemoto, Aichi-ken, JP;
Naoki Shibata, Aichi-ken, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;
Koha Co., Ltd., Tokyo, JP;
Abstract
A method of forming a low temperature-grown buffer layer having the steps of: placing a GaOsubstrate in a MOCVD apparatus; providing a Hatmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NHonto the GaOsubstrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the GaOsubstrate.