Kiyosu, Japan

Yuhei Ikemoto

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 26(Granted Patents)


Location History:

  • Aichi, JP (2009)
  • Aichi-ken, JP (2009)
  • Kiyosu, JP (2014 - 2022)

Company Filing History:


Years Active: 2009-2022

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6 patents (USPTO):Explore Patents

Title: Yuhei Ikemoto: Innovator in Semiconductor Technology

Introduction

Yuhei Ikemoto is a prominent inventor based in Kiyosu, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advancing the capabilities and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations is a semiconductor device that comprises a nitride semiconductor layer, an oxide insulating film in contact with the nitride layer, and a gate electrode made of metal nitride. This design includes specific crystal orientations that enhance the device's performance. Another notable patent is for a Group III nitride semiconductor light-emitting device. This device features a semiconductor layer with a p-layer, a light-emitting layer, and an n-layer, along with an n-electrode and a device isolation trench that provides a mesa shape to the semiconductor layer.

Career Highlights

Throughout his career, Yuhei Ikemoto has worked with notable companies such as Toyoda Gosei Co., Ltd. and Koha Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Yuhei has collaborated with esteemed colleagues, including Koji Hirata and Toshiya Uemura. These partnerships have fostered a creative environment that has led to innovative solutions in the semiconductor field.

Conclusion

Yuhei Ikemoto's contributions to semiconductor technology are noteworthy, and his patents reflect his commitment to innovation. His work continues to influence the industry and pave the way for future advancements.

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