The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Sep. 19, 2018
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Inventors:
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02241 (2013.01); H01L 21/28264 (2013.01); H01L 21/3205 (2013.01); H01L 29/41725 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01); H01L 29/518 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01); H01L 29/51 (2013.01);
Abstract
A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.