The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Oct. 07, 2005
Toshiya Uemura, Aichi, JP;
Katsuhisa Sawazaki, Aichi, JP;
Masahito Nakai, Aichi, JP;
Yuhei Ikemoto, Aichi, JP;
Toshiya Uemura, Aichi, JP;
Katsuhisa Sawazaki, Aichi, JP;
Masahito Nakai, Aichi, JP;
Yuhei Ikemoto, Aichi, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi, JP;
Abstract
In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.