Aichi, Japan

Toshiya Uemura

This inventor holds 68 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Toyoda Gosei Co., Ltd., Kabushiki Kaisha Toyota Chuo Kenkyusho, Kabushiki Kaisha Toshiba. Active years: 1991-2016.

USPTO Granted Patents = 68 

% Patents Active = 57.4


Average Co-Inventor Count = 2.0

ph-index = 19

Forward Citations = 1,093(Granted Patents)

Forward Citations (Not Self Cited) = 1,064(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Nagoya, JP (1991)
  • Inazawa, JP (1996)
  • Tsushima, JP (1998 - 2005)
  • Nishikasugai-gun, JP (2004 - 2007)
  • Aichi-ken, JP (1999 - 2010)
  • Aichi, JP (1995 - 2014)
  • Kiyosu, JP (2012 - 2016)

Company Filing History:


Years Active: 1991-2016

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Areas of Expertise:
Group III Nitride
Light-Emitting Element
Semiconductor Device
Light-Emitting Diode
Manufacturing Method
Auxiliary Electrode
Superlattice Structure
Transparent Electrode
Luminescent Element
Electrode Pads
Compound Semiconductor
Light-Emitting Apparatus
68 patents (USPTO):Explore Patents

Title: Toshiya Uemura - A Pioneer in Group-III Nitride Semiconductor Technology

Introduction

Toshiya Uemura, hailing from Aichi-ken, Japan, is a notable inventor with an impressive portfolio of 68 patents. His groundbreaking work primarily focuses on advancements in group-III nitride semiconductor technology, particularly in light-emitting devices.

Latest Patents

Among his latest innovations are two significant patents related to group-III nitride semiconductor light-emitting elements and devices. The first patent describes a group-III nitride semiconductor light-emitting element that incorporates a sophisticated structure with a semiconductor layer consisting of a light-emitting layer, a p-type semiconductor layer, and an n-type semiconductor layer. This design includes p-contact and n-contact electrodes positioned strategically to enhance performance.

The second patent expands on the earlier work, detailing a group-III nitride semiconductor light-emitting device that features a conductive support, a p-electrode, an active layer, and an n-type layer. The innovative aspect lies in the presence of a groove within the n-type layer, which enhances the device’s efficiency by integrating a light-transmitting insulating film across its surfaces.

Career Highlights

Throughout his career, Uemura has worked with prominent companies, notably Toyoda Gosei Co., Ltd. and Toyota Chuo Kenkyusho. His contributions in these roles have significantly propelled advancements in semiconductor applications, enhancing the overall performance of light-emitting devices in various fields.

Collaborations

Uemura has collaborated with esteemed colleagues such as Shigemi Horiuchi and Naoki Shibata. These partnerships have facilitated the exchange of ideas and expertise, contributing to the rapid development of innovative technologies in the semiconductor sector.

Conclusion

Toshiya Uemura stands out as a remarkable inventor whose contributions to group-III nitride semiconductor technology have paved the way for significant advancements in light-emitting devices. With a robust portfolio of patents and meaningful collaborations, his work continues to influence the field, demonstrating the ongoing importance of innovation in technology.

Profile summary based on public USPTO records.
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