The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Nov. 29, 2007
Masanobu Ando, Aichi-ken, JP;
Shigemi Horiuchi, Aichi-ken, JP;
Yoshinori Kinoshita, Aichi-ken, JP;
Ryohei Inazawa, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Masanobu Ando, Aichi-ken, JP;
Shigemi Horiuchi, Aichi-ken, JP;
Yoshinori Kinoshita, Aichi-ken, JP;
Ryohei Inazawa, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
The method of the invention for producing a group III-V semiconductor device includes forming, on a base, a plurality of semiconductor devices isolated from one another, each semiconductor device having at least an n-layer proximal to the base, and a p-layer distal to the base, and having a p-electrode formed on the top surface of the p-layer, and a first low-melting-point metal diffusion preventing layer, the low-melting-point metal diffusion preventing layer being formed on the top surface of the p-electrode; forming, from a dielectric material, a side-surface protective film so as to cover a side surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.