Shigemi Horiuchi

Title: Shigemi Horiuchi: Innovator in Group III-V Semiconductor Technology

Introduction

Shigemi Horiuchi is a prominent inventor based in Aichi-ken, Japan, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Horiuchi has made remarkable advancements in the field of Group III-V semiconductor devices.

Latest Patents

Horiuchi's latest patents focus on innovative methods for producing Group III-V semiconductor devices. One of his notable inventions involves a method that includes forming a plurality of semiconductor devices isolated from one another on a base. This method also incorporates ion implantation to create a high-resistance region in the surface layer of each device. After this formation, a p-electrode and a low-melting-point metal diffusion prevention layer are added to the top surface. The semiconductor device is then bonded to a conductive support substrate via a low-melting-point metal layer, followed by the removal of the base through a laser lift-off process. Another patent outlines a similar method, emphasizing the formation of a side-surface protective film from dielectric material to enhance device integrity.

Career Highlights

Throughout his career, Shigemi Horiuchi has worked with notable companies such as Toyoda Gosei Co., Ltd. and Toyota Central R&D Labs, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.

Collaborations

Horiuchi has collaborated with esteemed colleagues, including Toshiya Uemura and Masanobu Ando. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor research.

Conclusion

Shigemi Horiuchi's work in the field of Group III-V semiconductor devices showcases his innovative spirit and dedication to advancing technology. His patents and collaborations reflect his significant impact on the semiconductor industry.