The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Feb. 22, 2010
Masanobu Ando, Aichi-ken, JP;
Shigemi Horiuchi, Aichi-ken, JP;
Yoshinori Kinoshita, Aichi-ken, JP;
Kazuyoshi Tomita, Nagoya, JP;
Masanobu Ando, Aichi-ken, JP;
Shigemi Horiuchi, Aichi-ken, JP;
Yoshinori Kinoshita, Aichi-ken, JP;
Kazuyoshi Tomita, Nagoya, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;
Abstract
A method for producing a Group III-V semiconductor device, includes forming, on a base, a plurality of semiconductor devices isolated from one another, forming, through ion implantation, a high-resistance region in a surface layer of a side surface of each semiconductor device, after formation of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of the semiconductor device, bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer, and removing the base through the laser lift-off process.