The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
May. 06, 2001
Toshiya Uemura, Aichi, JP;
Atsuo Hirano, Aichi, JP;
Shigemi Horiuchi, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
The present invention provides a Group III nitride compound semiconductor device in which the amount of a current allowed to be applied on a p-type pad electrode can be increased. That is, in the Group III nitride compound semiconductor device according to the present invention, a portion of a translucent electrode coming in contact with a circumferential surface of the p-type pad electrode is formed as a thick port ion to thereby increase the area of contact between the circumferential surface and the translucent electrode to thereby increase the current allowed to be applied on the p-type pad electrode. In addition, the use of the thick portion prevents cracking from occuring between the translucent electrode and the circumferential surface of the pad electrode.