The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Apr. 03, 2007
Applicant:
Toshiya Uemura, Aichi, JP;
Inventor:
Toshiya Uemura, Aichi, JP;
Assignee:
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 29/227 (2006.01); H01L 33/00 (2006.01); H01L 29/24 (2006.01); H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 29/167 (2006.01); H01L 29/18 (2006.01); H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a light emitting element that can extract substantially all the light emitted from a luminous layer structure to the outside, a GaN substrate and a luminous layer structure are formed by growing III nitride compound semiconductor on a sapphire substrate that is a growth substrate. Thereafter, the sapphire substrate is lifted off and minute irregularities are formed on the exposed GaN substrate. The pitch of irregularities is shorter than the wavelength of light emitted from the luminous layer structure.