The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Aug. 21, 2007
Takayoshi Yajima, Aichi-ken, JP;
Masanobu Ando, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Akira Kojima, Aichi-ken, JP;
Koji Kaga, Aichi-ken, JP;
Takayoshi Yajima, Aichi-ken, JP;
Masanobu Ando, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Akira Kojima, Aichi-ken, JP;
Koji Kaga, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-gun, JP;
Abstract
A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlInGaN (0≦X≦1, 0≦Y≦1, 0≦X+Y≦1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.