Toyoda Gosei Co., Ltd.

Koha Co., Ltd.

Yuhei Ikemoto

Koji Hirata

Naoki Shibata

Toshiya Uemura

Kazuo Aoki

Kiyoshi Shimamura

Encarnacion Antonia Garcia Villora

Masanori Murakami

Yasuhisa Ushida

Junya Nishii

Naoki Arazoe

Daisuke Shinoda

Katsuhisa Sawazaki

Kazuhiro Ito

Ryohei Inazawa

Susumu Tsukimoto

Koichi Mizutani

Masahito Nakai

Takatomi Izumi

Tomoyuki Tainaka

Yu Uchida

Daisuke Yamazaki

A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.

Semiconductor device

The light-emitting device has a semiconductor layer including a p-layer, a light-emitting layer, and an n-layer, which are formed of a Group III nitride semiconductor, and an n-electrode on the n-layer. The device also has a device isolation trench which runs along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench. The n-electrode consists of two pad portions and a wire trace portion. The outer peripheral wire trace portion is formed as a frame completely contouring the periphery of the device.

Group III nitride semiconductor light-emitting device

The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28&#x2266;n&#xd7;d&#xd7;2/&#x3bb;&#x2266;0.42 or 0.63&#x2266;n&#xd7;d&#xd7;2/&#x3bb;&#x2266;0.77, wherein n represents the refractive index of the transparent film, drepresents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and &#x3bb; represents the wavelength of the light emitted from the MQW layer.

In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.

Group III nitride compound semiconductor light emitting device

A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.

Light emitting element and production method thereof

A method of forming a low temperature-grown buffer layer having the steps of: placing a GaOsubstrate in a MOCVD apparatus; providing a Hatmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350&#xb0; C. to 550&#xb0; C.; and supplying a source gas having two or more of TMG, TMA and NHonto the GaOsubstrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the GaOsubstrate.

Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device

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Kiyosu, Japan

Yuhei Ikemoto