The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Dec. 21, 2012
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Yuhei Ikemoto, Kiyosu, JP;
Naoki Arazoe, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, unknown;
Abstract
The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28≦n×d×2/λ≦0.42 or 0.63≦n×d×2/λ≦0.77, wherein n represents the refractive index of the transparent film, drepresents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and λ represents the wavelength of the light emitted from the MQW layer.