Toyoda Gosei Co., Ltd.

Other

Ngk Insulators, Inc.

Mazda Motor Corporation

Osaka University

Research Development Corporation of Japan

Koha Co., Ltd.

Naoki Shibata

Jun Ito

Toshiaki Chiyo

Hiroshi Watanabe

Shinya Asami

Masanobu Senda

Makoto Asai

Shizuyo Asami

Toshiya Uemura

Masayoshi Koike

Masanori Murakami

Michinari Sassa

Shiro Yamazaki

Shizuyo Noiri

Katsuhide Manabe

Hisaki Kato

Takahiro Kozawa

Yasuo Koide

Takahide Oshio

Koji Okuno

Hiroshi Amano

Miki Moriyama

Junichi Umezaki

Koji Hirata

Norikatsu Koide

Toshimasa Hayashi

Shigemi Horiuchi

Kazuki Nishijima

Tomohiko Mori

Takeshi Ohwaki

Fumio Kawamura

Kazuo Aoki

Katsuhiro Imai

Takatomo Sasaki

Makoto Iwai

Isamu Akasaki

Kiyoshi Shimamura

Encarnacion Antonia Garcia Villora

Yusuke Mori

Tetsu Kachi

Atsuo Hirano

Kazuyoshi Tomita

Masayoshi Kosaki

Makoto Tamaki

Yasuhisa Ushida

Hiroshi Sogabe

Mitsuhiro Inoue

Toshiharu Ikeda

Nobuhiko Yokoyama

Yoshikazu Ide

Nobuyuki Shibutake

Yuhei Ikemoto

Daisuke Shinoda

Yasuhiko Nishida

Masami Yamada

Susumu Tsukimoto

Kazuhiro Ito

Kohji Hashida

Shunsuke Murai

Tomohiro Sakai

Teppei Watanabe

Daisuke Yamazaki

Ippei Fujimoto

Tsutomu Sekine

Masahiro Shimada

Osamu Nakatsuka

Ryohei Konishi

Ryuichi Yasukochi

Toshinori Toyohara

A method for producing a Group III nitride semiconductor comprising forming mesas on a main surface of a substrate, and growing Group III nitride semiconductor in a c-axis direction thereof, wherein the plane most parallel to the side surfaces of the mesas or the dents among the low-index planes of growing Group III nitride semiconductor is a m-plane (1-100), and when a projected vector obtained by orthogonally projecting a normal vector of the processed side surface to the main surface is defined as a lateral vector, an angle between the lateral vector and a projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing Group III nitride semiconductor to the main surface is 0.5&#xb0; or more and 6&#xb0; or less.

Production method for group III nitride semiconductor and group III nitride semiconductor

Group III nitride semiconductor having reduced threading dislocation density and uniform Ga-polar surface is provided. Forming a capping layer on a buffer layer containing Al as an essential element at a temperature lower than a temperature at which an oxide of element constituting the buffer layer is formed. Heat treating the substrate having the buffer layer covered by the capping layer at a temperature higher than a temperature at which a crystal of body semiconductor grows without exposing the surface of the buffer layer. The substrate temperature is decreased to a temperature at which a crystal of the body semiconductor grows and the body semiconductor is grown.

Method for producing group III nitride semiconductor

A first side surface of post of the first stripe is formed so that a plane which is most parallel to the first side surface among low-index planes of the growing Group III nitride semiconductor is a m-plane (10-10), and a first angle between the first lateral vector obtained by orthogonally projecting a normal vector of the first side surfaces to the main surface and a m-axis projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing semiconductor to the main surface is from 0.5&#xb0; to 6&#xb0;. A second side surface of post of the second stripe is formed so that a plane which is most parallel to the second side surface among low-index planes of the growing semiconductor is an a-plane (11-20), and a second angle between the second lateral vector and an a-axis projected vector of the a-plane is from 0&#xb0; to 10&#xb0;.

Method for producing Group III nitride semiconductor and Group III nitride semiconductor

A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed state, comprising AlGaN is formed on a substrate. The substrate having the buffer layer formed thereon is heat-treated at a temperature higher than a temperature at which a single crystal of a Ga-containing group III nitride semiconductor grows on the buffer layer and at a temperature that the Ga-containing group III nitride semiconductor does not grow, to reduce crystal nucleus density of the buffer layer as compared with the density before the heat treatment. After the heat treatment, the temperature of the substrate is decreased to a temperature that the Ga-containing group III nitride semiconductor grows, the temperature is maintained, and the Ga-containing group III nitride semiconductor is grown on the buffer layer.

Method for producing Ga-containing group III nitride semiconductor

A support structure of a windshield of the present invention comprises a frame having an open section opening forward in a vehicle and a support member provided inside the frame and connecting an upper face portion and a lower face portion of the frame. The frame has a windshield support portion supporting a lower side portion of the windshield at part of the upper face portion. The support member includes a rear support portion attached to the upper face portion of the frame and a front support portion attached to a cowl panel at a specified location positioned in front of the rear support portion. The windshield support portion is positioned between the front and rear support portions in the vehicle longitudinal direction.

Support structure of windshield

The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

Semiconductor substrate, electronic device, optical device, and production methods therefor

A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd), platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).

n-Electrode for III group nitride based compound semiconductor element

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layerhas about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting semiconductor device using group III nitrogen compound

A p-type electrode containing a first electrode material exhibiting an eutectic reaction at a temperature of 600&#xb0; C. or lower, and a second electrode material of aluminum (Al).

Electrode for p-type SiC

In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.

Semiconductor device having an undercoat layer and method of manufacturing the same

A method of forming a low temperature-grown buffer layer having the steps of: placing a GaOsubstrate in a MOCVD apparatus; providing a Hatmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350&#xb0; C. to 550&#xb0; C.; and supplying a source gas having two or more of TMG, TMA and NHonto the GaOsubstrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the GaOsubstrate.

Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device

In the present invention, (TiA)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the metal nitride layer. When a Ti layer is formed between the metal nitride layer having a sufficient thickness and a substrate and the titanium layer is removed, a Group III nitride compound semiconductor device using metal nitride as a substrate can be obtained.

Compound semiconductor element based on Group III element nitride

A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light emitted from the light-emitting layer to thereby emit light at a wavelength longer than that of the light emitted from the light-emitting layer.

Group III nitride compound semiconductor light-emitting element

Growing community of inventors

Aichi, Japan

Naoki Shibata