The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Jun. 07, 2002
Applicants:
Naoki Shibata, Nishikasugai-gun, JP;
Takahiro Kozawa, Aichi-gun, JP;
Inventors:
Naoki Shibata, Nishikasugai-gun, JP;
Takahiro Kozawa, Aichi-gun, JP;
Assignee:
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light emitted from the light-emitting layer to thereby emit light at a wavelength longer than that of the light emitted from the light-emitting layer.