The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Feb. 11, 2014
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Koji Okuno, Kiyosu, JP;
Takahide Oshio, Kiyosu, JP;
Naoki Shibata, Kiyosu, JP;
Hiroshi Amano, Nagoya, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
Group III nitride semiconductor having reduced threading dislocation density and uniform Ga-polar surface is provided. Forming a capping layer on a buffer layer containing Al as an essential element at a temperature lower than a temperature at which an oxide of element constituting the buffer layer is formed. Heat treating the substrate having the buffer layer covered by the capping layer at a temperature higher than a temperature at which a crystal of body semiconductor grows without exposing the surface of the buffer layer. The substrate temperature is decreased to a temperature at which a crystal of the body semiconductor grows and the body semiconductor is grown.