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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ming-Hsi Yeh

USPTO Granted Patents = 128 

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 160(Granted Patents)

Forward Citations (Not Self Cited) = 118(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchun, TW (2013 - 2016)
  • Hsin-Chu, TW (2013 - 2024)

Company Filing History:

goldMedal128 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2025

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Areas of Expertise:
Metal Gate Patterning
Semiconductor Structure
Fin Field-Effect Transistor
Wet Cleaning
Etching Methods
Gate Resistance Improvement
Conductive Features
Hybrid Work Function Layer
Oxidation Techniques
Tunable Metal Recess
Feedback Control In Fin-Thinning
High-K Dielectric Layers
128 patents (USPTO):Explore Patents
1. 12495603 - Semiconductor device and manufacturing method for the same (2025-12-09),
2. 12490497 - Metal gate patterning (2025-12-02),
3. 12469789 - Semiconductor structure (2025-11-11),
4. 12469710 - Method of manufacturing a semiconductor device (2025-11-11),
5. 12439643 - Fin shape modification (2025-10-07),
6. 12394669 - Wet cleaning with tunable metal recess for via plugs (2025-08-19),
7. 12389661 - Method for modifying metal-including material in semiconductor manufacturing process (2025-08-12),
8. 12381092 - Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure (2025-08-05),
9. 12381081 - Method of breaking through etch stop layer (2025-08-05),
10. 12376372 - Fin field-effect transistor and method of forming the same (2025-07-29),
11. 12376358 - Semiconductor devices and methods of manufacturing thereof (2025-07-29),
12. 12376326 - Gate resistance improvement and method thereof (2025-07-29),
13. 12369348 - Fin Field-Effect Transistor device and method of forming the same (2025-07-22),
14. 12363966 - Semiconductor devices and method of forming the same (2025-07-15),
15. 12362189 - Semiconductor devices and methods of manufacturing thereof (2025-07-15),

Title: The Innovative Journey of Ming-Hsi Yeh

Introduction: Ming-Hsi Yeh, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Ming-Hsi Yeh's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips with enhanced processing capabilities.

Career Highlights: With a career spanning over two decades, Ming-Hsi Yeh has held key positions in leading tech companies, where he spearheaded research and development projects that have resulted in numerous patented inventions.

Collaborations: Ming-Hsi Yeh is known for his collaborative spirit, having worked closely with top engineers, researchers, and scientists from renowned institutions and companies worldwide to bring his innovative ideas to life.

Conclusion: Ming-Hsi Yeh's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the field of semiconductor technology.

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