The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jan. 02, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Shih Wang, Tainan, TW;
Hong-Jie Yang, Hsinchu, TW;
Chia-Ying Lee, New Taipei, TW;
Po-Nan Yeh, Hsinchu, TW;
U-Ting Chiu, Hsinchu, TW;
Chun-Neng Lin, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Kuo-Bin Huang, Jhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.