The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jun. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Chi Pan, Zhubei, TW;

Kuan-Wei Lin, Tainan, TW;

Chun-Neng Lin, Hsin-chu, TW;

Yu-Shih Wang, Tainan, TW;

Ming-Hsi Yeh, Hsinchu, TW;

Kuo-Bin Huang, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/667 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 64/01318 (2026.01);
Abstract

A semiconductor device includes a plurality of fin structures disposed over a substrate and a work function alloy layer disposed over each fin structure of the plurality of fin structures. The plurality of fin structures includes a first fin structure and a second fin structure. A content of a first element in a first portion of the work function alloy layer, which portion is disposed over the first fin structure, is different from a content of the first element in a second portion of the work function alloy layer, which portion is disposed over the second fin structure.


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