For the Inventor, By the Inventor

Enter inventor name

Hsin-Che Chiang

USPTO Granted Patents = 54

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 30(Granted Patents)

Forward Citations (Not Self Cited) = 25(Dec 10, 2025)

Location History:

Hsinchu, TW (2018 - 2024)
Taipei, TW (2018 - 2024)

Company Filing History:

54 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2018-2025

Loading Chart...

Areas of Expertise:

Gate Dielectric

Semiconductor Device Structures

Epitaxial Blocking Layer

Metal Gate

Fin Field Effect Transistor

Nanosheet CMOS Device

Threshold Voltage Distribution

Gate Resistance Improvement

Dielectric Fin

Monolayers

Multi-Gate Devices

Manufacturing Methods

54 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12490505 - Gate dielectric having a non-uniform thickness profile (2025-12-02),

2. 12376326 - Gate resistance improvement and method thereof (2025-07-29),

3. 12362229 - Semiconductor device structures (2025-07-15),

4. 12349447 - Structure and formation method of semiconductor device with dielectric fin (2025-07-01),

5. 12336272 - Semiconductor device structure and methods of forming the same (2025-06-17),

6. 12324235 - Semiconductor device and method of forming the same (2025-06-03),

7. 12288723 - Semiconductor device and manufacturing method thereof (2025-04-29),

8. 12199164 - Semiconductor device and manufacturing method thereof (2025-01-14),

9. 12183810 - Semiconductor devices and methods of manufacture (2024-12-31),

10. 12170320 - Semiconductor device and method of manufacture (2024-12-17),

11. 12166034 - Semiconductor device with CPODE and related methods (2024-12-10),

12. 12087844 - Semiconductor device structure with uniform threshold voltage distribution and method of forming the same (2024-09-10),

13. 12027415 - Semiconductor device structures (2024-07-02),

14. 12015077 - Metal gate using monolayers (2024-06-18),

15. 11923455 - Semiconductor device and method of forming the same (2024-03-05),

Title: The Innovative Journey of Hsin-Che Chiang

Introduction:

Hsin-Che Chiang, a visionary inventor hailing from Taipei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Chiang's latest patents showcase his prowess in developing cutting-edge solutions for various industries, ranging from electronics to healthcare.

Career Highlights:

Throughout his illustrious career, Hsin-Che Chiang has been at the forefront of innovation, consistently pushing the boundaries of what is possible. His work has not only earned him recognition but has also revolutionized the way we approach technological challenges.

Collaborations:

Chiang's collaborative spirit has led to fruitful partnerships with leading companies and research institutions worldwide. His ability to work seamlessly with others has resulted in the creation of groundbreaking technologies that have left a lasting impact.

Conclusion:

In conclusion, Hsin-Che Chiang's dedication to innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology. His inventive spirit continues to inspire future generations of inventors to push the limits of what is achievable.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…