The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jun. 17, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Yi Chang, Hsinchu City, TW;
Hsiao-Chu Chen, Caotun Township, TW;
Hong-Chih Chen, Changhua County, TW;
Hsin-Che Chiang, Taipei City, TW;
Chun-Sheng Liang, Puyan Township, Changhua County, TW;
Kuo-Hua Pan, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The first gate stack includes a first gate electrode and a dielectric layer between the first gate electrode and the substrate, and the first gate electrode has a void. The method includes oxidizing a side portion of the first gate electrode to form an oxide layer over the first gate electrode. The oxide layer fills the void.