The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jul. 14, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Wei-Chih Kao, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure and a formation method are provided. The method includes forming a first dielectric fin and a second dielectric fin over a substrate, and the second dielectric fin is taller than the first dielectric fin. The method also includes forming a gate stack over the substrate, and the gate stack extends across the first dielectric fin and the second dielectric fin. The method further includes partially removing the gate stack such that an opening exposing the second dielectric fin is formed and forming an isolation structure in the opening.