The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Jun. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hong-Chih Chen, Changhua County, TW;
Wei-Chih Kao, Taipei, TW;
Chun-Yi Chang, Hsinchu City, TW;
Yu-San Chien, Hsinchu City, TW;
Hsin-Che Chiang, Taipei City, TW;
Chun-Sheng Liang, Puyan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes first and second gate structures formed over a semiconductor substrate and a multilayer gate isolation structure separating the first gate structure from the second gate structure. The multilayer gate isolation structure includes a first insulating feature adjacent to upper portions of the first gate structure and the second gate structure, and a second insulating feature separating the semiconductor substrate from the first insulating feature. The material of the second insulating feature is different than that of the first insulating feature. The second insulating feature has a lower dielectric constant or lower etch resistance than the first insulating feature.