The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Aug. 02, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ssu-Yu Liao, Hsinchu, TW;
Ta-Wei Lin, Hsinchu, TW;
Tsu-Hui Su, Taipei, TW;
Chun-Hsiang Fan, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Kuo-Bin Huang, Jhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/306 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H01L 21/306 (2013.01); H10D 30/021 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract
Fin and nanostructured channel structure formation techniques for three-dimensional transistors can tune device performance. For example, fin profile control can be achieved by modifying the shape of fins/nanostructured channel structures so as to reduce their line edge roughness. Consequently, current flow within the channel regions of fins and nanostructured channel structures can be improved, enhancing device performance.