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For the Inventor, By the Inventor

Annaka, Japan

Masaru Shinomiya

This inventor holds 20 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Manufacturing. Top assignees: Shin-Etsu Handotai Co., Ltd., Sanken Electric Co., Ltd., Shin-Etsu Handotai, Ltd.. Active years: 1992-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaru Shinomiya. Retrieved from https://idiyas.com/inventor/masaru-shinomiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 90.0

Average Co-Inventor Count = 5.1

ph-index = 4

Forward Citations = 56(Granted Patents)


Company Filing History:

goldMedal18 out of 1,099 
 
Shin-Etsu Handotai Co., Ltd.
 patents
silverMedal11 out of 644 
 
Sanken Electric Co., Ltd.
 patents
bronzeMedal2 out of 22 
 
Shin-Etsu Handotai, Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1992-2026

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Areas of Expertise:
Silicon Substrate
Epitaxial Wafer
Nitride Semiconductor
Semiconductor Device
Vapor Phase Growth
Buffer Layer
Crystal Growth
Wafer Production
Composition Graded
Manufacturing Method
Electronic Devices
Semiconductor Technology
20 patents (USPTO):Explore Patents
1. 12610599 - Nitride semiconductor wafer and method for producing nitride semiconductor wafer (2026-04-21),
2. 12606935 - Silicon single crystal substrate for vapor phase growth, vapor phase growth substrate and methods for producing them (2026-04-21),
3. 12266520 - Method for manufacturing epitaxial wafer, silicon-based substrate for epitaxial growth, and epitaxial wafer (2025-04-01),
4. 10833184 - Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate (2020-11-10),
5. 10586701 - Semiconductor base having a composition graded buffer layer stack (2020-03-10),
6. 10553674 - Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device (2020-02-04),
7. 10529842 - Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device (2020-01-07),
8. 10319587 - Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth (2019-06-11),
9. 10115589 - Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device (2018-10-30),
10. 10068985 - Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device (2018-09-04),
11. 9966259 - Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor device (2018-05-08),
12. 9938638 - Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer (2018-04-10),
13. 9876101 - Semiconductor substrate and semiconductor device (2018-01-23),
14. 9673052 - Silicon-based substrate having first and second portions (2017-06-06),
15. 9520286 - Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device (2016-12-13),

Title: Masaru Shinomiya: A Pioneer in Epitaxial Wafer Technology

Introduction

Masaru Shinomiya, based in Annaka, Japan, is a prominent inventor in the field of semiconductor technology. With a remarkable portfolio of 20 patents, his contributions have significantly advanced the manufacturing processes in the semiconductor industry.

Latest Patents

Shinomiya’s latest breakthroughs include innovative methods that enhance the production of epitaxial wafers. One such patent outlines a method for manufacturing an epitaxial wafer that involves preparing a silicon-based substrate with a chamfered portion, forming an annular trench in that chamfered section, and performing epitaxial growth. This method effectively suppresses the propagation of cracks from the peripheral chamfered region towards the center, improving the durability of the wafers.

Additionally, he has developed a semiconductor device substrate featuring a buffer layer made of a nitride semiconductor, which addresses issues related to transverse and longitudinal leak currents. This innovation enables enhanced performance of semiconductor devices under high-temperature conditions, mitigating the risk of current collapse phenomena.

Career Highlights

Masaru Shinomiya has made a notable impact by working with leading companies in the industry, including Shin-Etsu Handotai Co., Ltd. and Sanken Electric Co., Ltd. His experience in these organizations has equipped him with the knowledge necessary to drive forward the technologies surrounding semiconductor devices.

Collaborations

Throughout his career, Shinomiya has collaborated with renowned professionals such as Kazunori Hagimoto and Keitaro Tsuchiya. These collaborative efforts have fostered innovation and the sharing of ideas, further advancing the field of semiconductor technology.

Conclusion

Masaru Shinomiya's innovative approaches to manufacturing processes in semiconductor technology have positioned him as a significant figure in his field. With a solid foundation of 20 patents and a commitment to excellence, he continues to shape the future of semiconductor design and production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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