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Shin-Etsu Handotai, Ltd.

USPTO Granted Patents = 22

EPO Patents = 3

Forward Citations = 39

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43 inventors (with patents filed for the assignee):

Keitaro Tsuchiya (3 out of 17 patents)

Kosei Sugawara (2 out of 11 patents)

Tatsuo Abe (2 out of 14 patents)

4. Masaru Shinomiya (2 out of 20 patents)

5. Junya Ishizaki (2 out of 2 patents)

6. Junichi Ueno (2 out of 2 patents)

7. Isao Yokokawa (2 out of 2 patents)

8. Tsuyoshi Ohtsuki (1 out of 21 patents)

9. Hiroji Aga (1 out of 46 patents)

10. Yoshihiro Kubota (1 out of 105 patents)

11. Kaoru Ishii (1 out of 8 patents)

12. Hiromasa Hashimoto (1 out of 23 patents)

13. Katsuyuki Kitagawa (1 out of 3 patents)

14. Norihiro Kobayashi (1 out of 54 patents)

15. Hiroyuki Kamada (1 out of 10 patents)

22 patents: Sort by Forward Citations

1. 12745582 - Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer (2026-09-22),

2. 12731247 - Debris determination method (2026-09-08),

3. 12707944 - Method for manufacturing SOI wafer and SOI wafer (2026-08-11),

4. 12703059 - Polishing pad, double-side polishing device, and double-side polishing method for wafer (2026-08-11),

5. 12686940 - Single crystal pulling apparatus and method for pulling single crystal (2026-07-21),

6. 12660571 - Method for forming thermal oxide film on semiconductor substrate and method for producing semiconductor device (2026-06-16),

7. 12655537 - Epitaxial wafer (2026-06-16),

8. 12641924 - Bonded semiconductor device and method for manufacturing bonded semiconductor device (2026-05-26),

9. 12618172 - Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same (2026-05-05),

10. 12610599 - Nitride semiconductor wafer and method for producing nitride semiconductor wafer (2026-04-21),

11. 12606935 - Silicon single crystal substrate for vapor phase growth, vapor phase growth substrate and methods for producing them (2026-04-21),

12. 12604688 - Method for manufacturing SOI wafer (2026-04-14),

13. 12597124 - Debris determination method (2026-04-07),

14. 12581771 - Method for manufacturing epitaxial wafer for ultraviolet ray emission device, method for manufacturing substrate for ultra violet ray emission device, epitaxial wafer for ultraviolet ray emission device, and substrate for ultraviolet ray emission device (2026-03-17),

15. 12576473 - Single-side polishing apparatus, single-side polishing method, and polishing pad (2026-03-17),

Company Overview

Shin-Etsu Handotai, Ltd. is a leading manufacturer specializing in silicon products and materials, primarily serving the semiconductor industry. The company focuses on the development of high-purity silicon wafers, essential for various electronic applications. With a strong emphasis on research and innovation, Shin-Etsu Handotai is committed to advancing semiconductor technology and enhancing the performance of electronic devices. Headquartered in Japan, the company plays a pivotal role in the global supply chain for advanced materials.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

22 Patents

#36 in

#2,794 in Japan

#28,782 in the World

Shin-Etsu Handotai, Ltd.

Forward Citations = 39

43 inventors:

Keitaro Tsuchiya (3 out of 17 patents)

Kosei Sugawara (2 out of 11 patents)

Tatsuo Abe (2 out of 14 patents)

4. Masaru Shinomiya (2 out of 20 patents)

5. Junya Ishizaki (2 out of 2 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Shin-Etsu Handotai, Ltd.. Retrieved from https://idiyas.com/company/shin-etsu-handotai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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