The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Feb. 16, 2022
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Keitaro Tsuchiya, Takasaki, JP;
Masato Yamada, Chiyoda-ku, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The present invention is a method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method including steps of: preparing a supporting substrate having at least one surface composed of gallium nitride; forming a bonding layer on the surface composed of the gallium nitride of the supporting substrate; forming a laminated substrate having a seed crystal layer by laminating a seed crystal composed of an AlGaN (0.5<x≤1.0) single crystal to the bonding layer; and epitaxially growing an ultraviolet emission device layer on the seed crystal layer of the laminated substrate, the ultraviolet emission device layer having at least: a first conductive clad layer composed of AlGaN (0.5<y≤1.0); an AlGaN-based active layer; and a second conductive clad layer composed of AlGaN (0.5<z≤1.0). This provides a method for manufacturing an inexpensive, high-quality epitaxial wafer for an ultraviolet ray emission device.