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Yoshihiro Kubota

USPTO Granted Patents = 104 (Patent Applications = 20)

EPO Patents = 36 (Patent Applications = 29)

Average Co-Inventor Count = 3.6

ph-index = 12

Forward Citations = 456(Granted Patents)

Forward Citations (Not Self Cited) = 439(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Annaka-Shi, JP (2011)
Gunma-ken, JP (1997 - 2013)
Tokyo, JP (1991 - 2014)
Takasaki, JP (1983 - 2024)
Gunma, JP (1988 - 2024)
Annaka, JP (1997 - 2024)

Company Filing History:

101 out of 5,978

Shin-etsu Chemical Co., Ltd.

Shin-etsu Chemical C O., Ltd.

Furukawa Co., Ltd.

5. 1 out of 677

Eisai Company, Limited

6. 1 out of 832,880

Other

patents

where one patent can have more than one assignee

Years Active: 1983-2024

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Areas of Expertise:

Gan Substrate

Silicon Carbide Substrate

Composite Substrate

Semiconductor Manufacturing

Soi Wafer

Nanocarbon Film

Thermal Conductivity

Heat Dissipation

Hybrid Substrate

Single Crystal Silicon Solar Cell

Laminated Wafer

Corrosion-Resistant Materials

104 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11967530 - Method for producing GaN layered substrate (2024-04-23),

2. 11932936 - Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate (2024-03-19),

3. 11876014 - Method of transferring device layer to transfer substrate and highly thermal conductive substrate (2024-01-16),

4. 11479876 - Method for producing GaN laminate substrate having front surface which is Ga polarity surface (2022-10-25),

5. 11361969 - Device substrate with high thermal conductivity and method of manufacturing the same (2022-06-14),

6. 11346018 - Silicon carbide substrate production method and silicon carbide substrate (2022-05-31),

7. 11208719 - SiC composite substrate and method for manufacturing same (2021-12-28),

8. 11177123 - Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element (2021-11-16),

9. 11069560 - Method of transferring device layer to transfer substrate and highly thermal conductive substrate (2021-07-20),

10. 11001036 - Sapphire composite base material and method for producing the same (2021-05-11),

11. 10829868 - Manufacturing method of SiC composite substrate (2020-11-10),

12. 10781104 - Composite substrate, method for forming nanocarbon film, and nanocarbon film (2020-09-22),

13. 10711373 - SiC composite substrate and method for manufacturing same (2020-07-14),

14. 10612157 - Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrate (2020-04-07),

15. 10553518 - Heat dissipation substrate and method for producing same (2020-02-04),

Title: Yoshihiro Kubota - Pioneering Inventor from Gunma, Japan

Introduction: Yoshihiro Kubota is a renowned inventor hailing from Gunma, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kubota holds several patents in various technological domains, including robotics, artificial intelligence, and renewable energy systems.

Career Highlights: With a career spanning over two decades, Kubota has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in the industry.

Collaborations: Throughout his career, Kubota has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Yoshihiro Kubota's dedication to innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and researchers worldwide.

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