Epitaxial wafer for ultraviolet light emitting device, method for producing metal bonded substrate for ultraviolet light emitting device, method for producing ultraviolet light emitting device, and method for producing ultraviolet light emitting device array

Abstract

An epitaxial wafer for an ultraviolet light emitting device, including, a heat-resistant first support substrate, a planarization layer with a thickness of 0.5 to 3 μm on at least upper surface of the first support substrate, a group III nitride single crystal seed crystal layer with a thickness of 0.1 to 1.5 μm, bonds to upper surface of the planarization layer by bonding, on the seed crystal layer, an epitaxial layer including at least a first conductivity type cladding layer containing AlGaN (0.5<x≤1) as a main component, an AlGaN-based active layer, and a second conductivity type cladding layer containing AlGaN (0.5<y≤1) as a main component being laminated and grown in order. Thus, an epitaxial wafer for an ultraviolet light emitting device enables high quality light emitting devices in the deep ultraviolet region (UVC: 200 to 250 nm) to be manufactured at a lower cost than before.