The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Aug. 01, 2019
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Yoshihiro Kubota, Annaka, JP;
Kazutoshi Nagata, Annaka, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
The present invention includes: transferring a C-plane sapphire thin filmhaving an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrateand covering the surface of the C-plane sapphire thin filmwith a surface treatment layermade of AlN; having GaN grow epitaxially on the surface treatment layer; ion-implanting a GaN film; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate; performing peeling at an ion implantation regionin the GaN filmand transferring a GaN thin filmonto the support substrate; and obtaining a GaN laminate substrate