The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Jul. 10, 2018
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Yoshihiro Kubota, Annaka, JP;
Shigeru Konishi, Annaka, JP;
Abstract
Provided are a device substrate with high thermal conductivity, with high heat dissipation, and with a small loss at high frequencies, and a method of manufacturing the device substrate. A device substrateof the present invention can be manufactured by: provisionally bonding a Si device layer side of an SOI device substrateto a support substrateusing a provisional bonding adhesive, the SOI device substrate including a Si base substrate, a buried layerformed on the Si base substrate, having high thermal conductivity, and being an electrical insulator, and a Si device layerformed on the buried layer; removing the Si base substrateof the provisionally bonded SOI device substrate until the buried layer is exposed, thereby obtaining a thinned device wafer; transfer-bonding the buried layer side of the thinned device wafer and a transfer substrateto each other using a transfer adhesivehaving a heat-resistant temperature of at least 150° C. by applying heat and pressure, the transfer substrate having high thermal conductivity and being an electrical insulator; and separating the support substrate