Method for producing gan layered substrate

Abstract

Provided is a method for producing a GaN layered substrate, comprising the steps of: subjecting a C-plane sapphire substratehaving an off-angle of 0.5° to 5° to a high-temperature nitriding treatment at 800° C. to 1,000° C. to carry out a surface treatment of the C-plane sapphire substrate; carrying out epitaxial growth of GaN on the surface of the surface-treated C-plane sapphire substrateto produce a GaN film carrier having a surface of an N polar face; forming an ion implantation regionby carrying out ion implantation on the GaN film; laminating and joining a support substratewith the GaN film-side surface of the ion-implanted GaN film carrier; and separating at the ion-implanted regionin the GaN filmto transfer a GaN thin filmonto the support substrate, to produce a GaN layered substratehaving, on the support substrate, a GaN thin filmhaving a surface of a Ga polar face. A GaN layered substrate having a good crystallinity and a surface of a Ga face is obtained by a single transfer process.