The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Sep. 09, 2016
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Cusic Inc., Sendai, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
CUSIC INC., Sendai, JP;
Abstract
A manufacturing method of an SiC composite substratethat includes a single crystal SiC layeron a polycrystalline SiC substrate. After manufacturing a single crystal SiC layer supporting bodyby providing the single crystal SiC layeron one surface of a holding substrateincluding Si. A polycrystalline SiC is deposited on the single crystal SiC layerthrough chemical vapor deposition to manufacture an SiC laminated bodylaminated with the single crystal SiC layerand the polycrystalline SiC layerhaving a thickness t on the holding substrate'. At the same time, the single crystal SiC layer supporting bodyis heated at a temperature less than 1,414 degrees Celsius, and a portion of the thickness t of the polycrystalline SiC is deposited. Then, the holding substrate′ is physically and/or chemically removed.