Sendai, Japan

Hiroyuki Nagasawa


Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Sendai, JP (2017 - 2022)
  • Miyagi, JP (2024)

Company Filing History:


Years Active: 2017-2024

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10 patents (USPTO):Explore Patents

Title: Hiroyuki Nagasawa: Innovator in Silicon Carbide Technology

Introduction

Hiroyuki Nagasawa, an accomplished inventor based in Sendai, Japan, has made significant contributions to the field of semiconductor technology. With a portfolio of 10 patents, he is known for his innovative methods in producing silicon carbide (SiC) materials that are pivotal in enhancing the performance of electronic devices.

Latest Patents

Among his most recent patents, two notable innovations stand out: the SiC multilayer body and its production method, as well as the semiconductor device. The SiC multilayer production method details a groundbreaking technique for creating a SiC laminate composed of a hexagonal SiC layer and a 3C-SiC layer. This involves a strategic process of forming a seed plane, utilizing inclined planes, and epitaxially growing SiC layers in a controlled manner. Additionally, his silicon carbide substrate production method emphasizes the formation of a polycrystalline SiC film on a smooth substrate, which is crucial for reducing internal stress and improving the overall quality of semiconductor devices.

Career Highlights

Hiroyuki Nagasawa has significantly impacted the semiconductor industry through his work at leading companies such as Cusic Inc. and Shin-Etsu Chemical Co., Ltd. His extensive experience in these esteemed organizations has facilitated the practical application of his patented technologies, reinforcing his reputation as an influential figure in materials science and engineering.

Collaborations

Throughout his career, Nagasawa has collaborated with notable professionals in the field, including Yoshihiro Kubota and Shoji Akiyama. These collaborations have fostered an environment for innovation, allowing for the exchange of ideas and the development of advanced technologies in silicon carbide applications.

Conclusion

Hiroyuki Nagasawa's contributions to the semiconductor field, particularly in silicon carbide technology, have positioned him as a leading inventor in the industry. With a remarkable patent portfolio and a background of collaboration with other innovators, he continues to pave the way for advancements that enhance the efficiency and effectiveness of semiconductor devices. His ongoing work holds promise for further innovations in the realm of materials science.

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