The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Sep. 07, 2016
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Cusic Inc., Sendai-shi, Miyagi, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
CUSIC INC., Sendai-shi, JP;
Abstract
Provided is a method for manufacturing an SiC composite substratehaving a single-crystal SiC layeron a polycrystalline SiC substrate, wherein: the single-crystal SiC layeris provided on one surface of a holding substratecomprising Si, and a single-crystal SiC-layer carrieris prepared; polycrystalline SiC is then accumulated on the single-crystal SiC layerby a physical or chemical means, and an SiC laminateis prepared in which the single-crystal SiC layerand the polycrystalline SiC substrateare laminated on the holding substrate; and the holding substrateis then physically and/or chemically removed. With the present invention, an SiC composite substrate having a single-crystal. SiC layer with good crystallinity is obtained with a simple manufacturing process.