Cusic Inc.

Shin-etsu Chemical Co., Ltd.

Sumitomo Electric Industries, Limited

Tohoku University

Hiroyuki Nagasawa

Yoshihiro Kubota

Shoji Akiyama

Masaki Ueno

Fuminori Mitsuhashi

Yasunori Tateno

Maki Suemitsu

Hirokazu Fukidome

Takashi Ishizuka

Masaya Okada

Yoshihiro Tsukuda

According to one embodiment, a method of producing a SiC laminate having a hexagonal SiC layer and a 3C-SiC layer comprises: forming a seed plane parallel to a close-packed plane of the crystal lattice on the surface of the hexagonal SiC layer; providing an inclined plane, which is inclined with respect to the seed plane, to all faces adjacent to the seed plane; forming a two-dimensional nucleus of 3C-SiC on the seed plane; and epitaxially growing both the two-dimensional nucleus of 3C-SiC and the SiC layers exposed on the inclined plane simultaneously in a direction parallel to the close-packed plane of the crystal lattice.

SiC multilayer body, production method therefor, and semiconductor device

A silicon carbide substrate production method includes: the step of providing covering layers, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substratecarbon, silicon or silicon carbide, and turning the surface of each of the covering layersinto a smooth surface to prepare a support substrate; a step of forming a polycrystalline silicon carbide filmon both surfaces of the support substrateby a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfacesby chemically removing at least the covering layers, from the support substrate. The silicon carbide substrate has a smooth surface and reduced internal stress.

Silicon carbide substrate production method and silicon carbide substrate

Provided is an SiC composite substratehaving a monocrystalline SiC layeron a polycrystalline SiC substrate, wherein: some or all of the interface at which the polycrystalline SiC substrateand the monocrystalline SiC layerare in contact is an unmatched interface Ithat is not lattice-matched; the monocrystalline SiC layerhas a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrateis randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

SiC composite substrate and method for manufacturing same

A compound semiconductor laminate substrate comprising two single-crystalline compound semiconductor substrates directly bonded together and laminated, the single-crystalline compound semiconductor substrates having the same composition including A and B as constituent elements and having the same atomic arrangement, characterized in that the front and back surfaces of the laminate substrate are polar faces comprising the same kind of atoms of A or B, and that a laminate interface comprises a bond of atoms of either B or A and is a unipolar anti-phase region boundary plane in which the crystal lattices of the atoms are matched. In this way, the polar faces of the front and rear surfaces of the compound semiconductor laminate substrate are made monopolar, thereby facilitating semiconductor element process designing, and making it possible to manufacture a low-cost, high-performance, and stable semiconductor element without implementing complex substrate processing.

Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element

A manufacturing method of an SiC composite substratethat includes a single crystal SiC layeron a polycrystalline SiC substrate. After manufacturing a single crystal SiC layer supporting bodyby providing the single crystal SiC layeron one surface of a holding substrateincluding Si. A polycrystalline SiC is deposited on the single crystal SiC layerthrough chemical vapor deposition to manufacture an SiC laminated bodylaminated with the single crystal SiC layerand the polycrystalline SiC layerhaving a thickness t on the holding substrate'. At the same time, the single crystal SiC layer supporting bodyis heated at a temperature less than 1,414 degrees Celsius, and a portion of the thickness t of the polycrystalline SiC is deposited. Then, the holding substrate&#x2032; is physically and/or chemically removed.

Manufacturing method of SiC composite substrate

Provided is a method for manufacturing an SiC composite substratehaving a single-crystal SiC layeron a polycrystalline SiC substrate, wherein: the single-crystal SiC layeris provided on one surface of a holding substratecomprising Si, and a single-crystal SiC-layer carrieris prepared; polycrystalline SiC is then accumulated on the single-crystal SiC layerby a physical or chemical means, and an SiC laminateis prepared in which the single-crystal SiC layerand the polycrystalline SiC substrateare laminated on the holding substrate; and the holding substrateis then physically and/or chemically removed. With the present invention, an SiC composite substrate having a single-crystal. SiC layer with good crystallinity is obtained with a simple manufacturing process.

Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrate

A method for producing a SiC composite substratehaving a single crystal SiC layeron a polycrystalline SiC substrate. After the single crystal SiC layeris provided on the front surface of a holding substrateincluding Si and having a silicon oxide filmon the front and back surfaces thereof to produce a single crystal SiC layer supporting body, a part or all of the thickness of the silicon oxide filmon one area or all of the back surface of the holding substratein the single crystal SiC layer supporting bodyis removed to impart warpage to the single crystal SiC layer supporting body'. Then, polycrystalline SiC is deposited on the single crystal SiC layerby chemical vapor deposition to form the polycrystalline SiC substrate, and the holding substrate is physically and/or chemically removed.

Method for producing SiC composite substrate

A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.

SiC structure, semiconductor device having SiC structure, and process of forming the same

A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G'/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.

Growing community of inventors

Sendai, Japan

Hiroyuki Nagasawa