The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Sep. 09, 2016
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Cusic Inc., Sendai-shi, Miyagi, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
CUSIC INC., Sendai-shi, Miyagi, JP;
Abstract
A method for producing a SiC composite substratehaving a single crystal SiC layeron a polycrystalline SiC substrate. After the single crystal SiC layeris provided on the front surface of a holding substrateincluding Si and having a silicon oxide filmon the front and back surfaces thereof to produce a single crystal SiC layer supporting body, a part or all of the thickness of the silicon oxide filmon one area or all of the back surface of the holding substratein the single crystal SiC layer supporting bodyis removed to impart warpage to the single crystal SiC layer supporting body'. Then, polycrystalline SiC is deposited on the single crystal SiC layerby chemical vapor deposition to form the polycrystalline SiC substrate, and the holding substrate is physically and/or chemically removed.