The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Sep. 08, 2016
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Cusic Inc., Sendai-shi, Miyagi, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
CUSIC INC., Sendai-shi, JP;
Abstract
Provided is an SiC composite substratehaving a monocrystalline SiC layeron a polycrystalline SiC substrate, wherein: some or all of the interface at which the polycrystalline SiC substrateand the monocrystalline SiC layerare in contact is an unmatched interface Ithat is not lattice-matched; the monocrystalline SiC layerhas a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrateis randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.