The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Apr. 27, 2021
Applicant:
Cusic Inc., Miyagi, JP;
Inventor:
Hiroyuki Nagasawa, Miyagi, JP;
Assignee:
CUSIC INC., Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/82 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02378 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/30625 (2013.01); H01L 21/8213 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/872 (2013.01);
Abstract
According to one embodiment, a method of producing a SiC laminate having a hexagonal SiC layer and a 3C-SiC layer comprises: forming a seed plane parallel to a close-packed plane of the crystal lattice on the surface of the hexagonal SiC layer; providing an inclined plane, which is inclined with respect to the seed plane, to all faces adjacent to the seed plane; forming a two-dimensional nucleus of 3C-SiC on the seed plane; and epitaxially growing both the two-dimensional nucleus of 3C-SiC and the SiC layers exposed on the inclined plane simultaneously in a direction parallel to the close-packed plane of the crystal lattice.