The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Mar. 01, 2018
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Cusic Inc., Sendai, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
CUSIC Inc., Sendai, JP;
Abstract
A silicon carbide substrate production method includes: the step of providing covering layers, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substratecarbon, silicon or silicon carbide, and turning the surface of each of the covering layersinto a smooth surface to prepare a support substrate; a step of forming a polycrystalline silicon carbide filmon both surfaces of the support substrateby a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfacesby chemically removing at least the covering layers, from the support substrate. The silicon carbide substrate has a smooth surface and reduced internal stress.