The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 01, 2017
Sumitomo Electric Industries, Ltd., Osaka, JP;
Tohoku University, Sendai-shi, Miyagi, JP;
Hiroyuki Nagasawa, Sendai, JP;
Maki Suemitsu, Sendai, JP;
Hirokazu Fukidome, Sendai, JP;
Yasunori Tateno, Yokohama, JP;
Fuminori Mitsuhashi, Itami, JP;
Masaya Okada, Itami, JP;
Masaki Ueno, Itami, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Abstract
A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.