The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Dec. 16, 2015
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Shoji Akiyama, Annaka, JP;

Yoshihiro Kubota, Annaka, JP;

Makoto Kawai, Annaka, JP;

Shigeru Konishi, Annaka, JP;

Hiroshi Mogi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/184 (2017.01); C01B 32/956 (2017.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); B32B 15/04 (2006.01); H01L 21/02 (2006.01); B32B 9/00 (2006.01); C01B 32/05 (2017.01); B32B 9/04 (2006.01); B32B 37/18 (2006.01); B32B 38/00 (2006.01); C30B 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C01B 32/184 (2017.08); B32B 9/00 (2013.01); B32B 9/005 (2013.01); B32B 9/04 (2013.01); B32B 15/04 (2013.01); B32B 37/18 (2013.01); B32B 38/0008 (2013.01); B32B 38/0012 (2013.01); C01B 32/05 (2017.08); C01B 32/956 (2017.08); C30B 29/36 (2013.01); H01L 21/02 (2013.01); H01L 21/02378 (2013.01); H01L 21/02527 (2013.01); H01L 21/02631 (2013.01); H01L 21/265 (2013.01); H01L 29/06 (2013.01); H01L 29/1606 (2013.01); H01L 29/34 (2013.01); B32B 2038/0016 (2013.01); B32B 2250/02 (2013.01); B32B 2255/20 (2013.01); B32B 2255/205 (2013.01); B32B 2310/14 (2013.01); B32B 2311/04 (2013.01); B32B 2315/02 (2013.01); B32B 2457/14 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 2204/30 (2013.01); Y10S 977/734 (2013.01); Y10S 977/842 (2013.01);
Abstract

Provided is a composite substrate which is provided with: a single crystal silicon carbide thin filmhaving a thickness of 1μm or less; a handle substratewhich supports the single crystal silicon carbide thin filmand is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layerwhich has a thickness of 1μm or less and is arranged between the single crystal silicon carbide thin filmand the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.


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