The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Mar. 04, 2022
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Yoshihiro Kubota, Gunma, JP;
Ippei Kubono, Gunma, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A seed substrate for epitaxial growth has a support substrate, a planarizing layer of 0.5 to 3 μm provided on the top surface of the support substrate, and a seed crystal layer provided on the top surface of the planarizing layer. The support substrate includes a core of group III nitride polycrystalline ceramics and a 0.05 to 1.5 μm encapsulating layer that encapsulates the core. The seed crystal layer is provided by thin-film transfer of 0.1 to 1.5 μm of the surface layer of Si<111> single crystal with oxidation-induced stacking faults (OSF) of 10 defects/cmor less. High-quality, inexpensive seed substrates with few crystal defects for epitaxial growth of epitaxial substrates and solid substrates of group III nitrides such as AlN, AlxGa1-xN (0<X<1) and GaN are obtained.